Abstract: The increasing demand for high-power and high-frequency electronics has led to the development of new materials and devices. One such material is gallium nitride (GaN), which has superior ...
Abstract: In this article, we introduce a physics-based model aimed at elucidating the conduction mechanisms responsible for gate leakage in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs).
Some results have been hidden because they may be inaccessible to you
Show inaccessible results